CBI MMBT5551T is a MMBT5551T from CBI, part of the Bipolar Transistors - BJT. It is designed for 160V 200mW 100@10mA,5V 600mA NPN SOT-523 Bipolar Transistors - BJT ROHS. This product comes in a SOT-523 package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 50nA
- Collector-Emitter Breakdown Voltage (Vceo): 160V
- Power Dissipation (Pd): 200mW
- DC Current Gain (hFE@Ic,Vce): 100@10mA,5V
- Collector Current (Ic): 600mA
- Transition Frequency (fT): 100MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@50mA,5mA
- Transistor Type: NPN
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.024 grams.
More on MMBT5551T
Full Specifications of MMBT5551T
| Model Number | MMBT5551T |
| Model Name | CBI MMBT5551T |
| Category | Bipolar Transistors - BJT |
| Brand | CBI |
| Description | 160V 200mW 100@10mA,5V 600mA NPN SOT-523 Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.024 grams / 0.000847 oz |
| Package / Case | SOT-523 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | - |
| Collector Cut-Off Current (Icbo) | 50nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 160V |
| Power Dissipation (Pd) | 200mW |
| DC Current Gain (hFE@Ic,Vce) | 100@10mA,5V |
| Collector Current (Ic) | 600mA |
| Transition Frequency (fT) | 100MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@50mA,5mA |
| Transistor Type | NPN |
| Operating Temperature | - |
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