MMDT3946DW by CBI – Specifications

CBI MMDT3946DW is a MMDT3946DW from CBI, part of the Bipolar Transistors - BJT. It is designed for 40V 200mW 100@10mA,1V 200mA NPN+PNP SOT-363 Bipolar Transistors - BJT ROHS. This product comes in a SOT-363 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 50nA
  • Collector-Emitter Breakdown Voltage (Vceo): 40V
  • Power Dissipation (Pd): 200mW
  • DC Current Gain (hFE@Ic,Vce): 100@10mA,1V
  • Collector Current (Ic): 200mA
  • Transition Frequency (fT): 300MHz;250MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@50mA,5mA;400mV@50mA,5mA
  • Transistor Type: NPN+PNP

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.029 grams.

More on MMDT3946DW

Full Specifications of MMDT3946DW

Model NumberMMDT3946DW
Model NameCBI MMDT3946DW
CategoryBipolar Transistors - BJT
BrandCBI
Description40V 200mW 100@10mA,1V 200mA NPN+PNP SOT-363 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.029 grams / 0.001023 oz
Package / CaseSOT-363
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)50nA
Collector-Emitter Breakdown Voltage (Vceo)40V
Power Dissipation (Pd)200mW
DC Current Gain (hFE@Ic,Vce)100@10mA,1V
Collector Current (Ic)200mA
Transition Frequency (fT)300MHz;250MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)300mV@50mA,5mA;400mV@50mA,5mA
Transistor TypeNPN+PNP
Operating Temperature-

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