SVF12N65F by Hangzhou Silan Microelectronics – Specifications

Hangzhou Silan Microelectronics SVF12N65F is a SVF12N65F from Hangzhou Silan Microelectronics, part of the MOSFETs. It is designed for 650V 12A 51W 680mΩ@10V,6A 4V@250uA 1PCSNChannel TO-220F MOSFETs ROHS. This product comes in a TO-220F package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 12A
  • Power Dissipation (Pd): 51W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 680mΩ@10V,6A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 3 grams.

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Full Specifications of SVF12N65F

Model NumberSVF12N65F
Model NameHangzhou Silan Microelectronics SVF12N65F
CategoryMOSFETs
BrandHangzhou Silan Microelectronics
Description650V 12A 51W 680mΩ@10V,6A 4V@250uA 1PCSNChannel TO-220F MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:3.000 grams / 0.105822 oz
Package / CaseTO-220F
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)12A
Power Dissipation (Pd)51W
Drain Source On Resistance (RDS(on)@Vgs,Id)680mΩ@10V,6A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel

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