Hangzhou Silan Microelectronics SVF2N60D is a SVF2N60D from Hangzhou Silan Microelectronics, part of the MOSFETs. It is designed for 600V 2A 34W 4.2Ω@10V,1A 4V@250uA N Channel TO-252-2(DPAK) MOSFETs ROHS. This product comes in a TO-252-2(DPAK) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 2A
- Power Dissipation (Pd): 34W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 4.2Ω@10V,1A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: N Channel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.468 grams.
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Full Specifications of SVF2N60D
| Model Number | SVF2N60D |
| Model Name | Hangzhou Silan Microelectronics SVF2N60D |
| Category | MOSFETs |
| Brand | Hangzhou Silan Microelectronics |
| Description | 600V 2A 34W 4.2Ω@10V,1A 4V@250uA N Channel TO-252-2(DPAK) MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.468 grams / 0.016508 oz |
| Package / Case | TO-252-2(DPAK) |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | - |
| Drain Source Voltage (Vdss) | 600V |
| Continuous Drain Current (Id) | 2A |
| Power Dissipation (Pd) | 34W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 4.2Ω@10V,1A |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | N Channel |