SVF3N80F by Hangzhou Silan Microelectronics – Specifications

Hangzhou Silan Microelectronics SVF3N80F is a SVF3N80F from Hangzhou Silan Microelectronics, part of the MOSFETs. It is designed for 800V 3A 39W 4.8Ω@10V,1.5A 4V@250uA N Channel TO-220F-3 MOSFETs ROHS. This product comes in a TO-220F-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 800V
  • Continuous Drain Current (Id): 3A
  • Power Dissipation (Pd): 39W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.8Ω@10V,1.5A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: N Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 3 grams.

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Full Specifications of SVF3N80F

Model NumberSVF3N80F
Model NameHangzhou Silan Microelectronics SVF3N80F
CategoryMOSFETs
BrandHangzhou Silan Microelectronics
Description800V 3A 39W 4.8Ω@10V,1.5A 4V@250uA N Channel TO-220F-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:3.000 grams / 0.105822 oz
Package / CaseTO-220F-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)800V
Continuous Drain Current (Id)3A
Power Dissipation (Pd)39W
Drain Source On Resistance (RDS(on)@Vgs,Id)4.8Ω@10V,1.5A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
TypeN Channel

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