SVF6N60D by Hangzhou Silan Microelectronics – Specifications

Hangzhou Silan Microelectronics SVF6N60D is a SVF6N60D from Hangzhou Silan Microelectronics, part of the MOSFETs. It is designed for 600V 6A 1.5Ω@10V,3A 125W 4V@250uA 1PCSNChannel TO-252-2(DPAK) MOSFETs ROHS. This product comes in a TO-252-2(DPAK) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.5Ω@10V,3A
  • Power Dissipation (Pd): 125W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.468 grams.

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Full Specifications of SVF6N60D

Model NumberSVF6N60D
Model NameHangzhou Silan Microelectronics SVF6N60D
CategoryMOSFETs
BrandHangzhou Silan Microelectronics
Description600V 6A 1.5Ω@10V,3A 125W 4V@250uA 1PCSNChannel TO-252-2(DPAK) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.468 grams / 0.016508 oz
Package / CaseTO-252-2(DPAK)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)6A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.5Ω@10V,3A
Power Dissipation (Pd)125W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel

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