SVF6N60F by Hangzhou Silan Microelectronics – Specifications

Hangzhou Silan Microelectronics SVF6N60F is a SVF6N60F from Hangzhou Silan Microelectronics, part of the MOSFETs. It is designed for 600V 6A 42W 1.5Ω@10V,3A 4V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS. This product comes in a TO-220F-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 6A
  • Power Dissipation (Pd): 42W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.5Ω@10V,3A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 3 grams.

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Full Specifications of SVF6N60F

Model NumberSVF6N60F
Model NameHangzhou Silan Microelectronics SVF6N60F
CategoryMOSFETs
BrandHangzhou Silan Microelectronics
Description600V 6A 42W 1.5Ω@10V,3A 4V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:3.000 grams / 0.105822 oz
Package / CaseTO-220F-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)6A
Power Dissipation (Pd)42W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.5Ω@10V,3A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel

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