Hangzhou Silan Microelectronics SVF7N80F is a SVF7N80F from Hangzhou Silan Microelectronics, part of the MOSFETs. It is designed for 800V 7A 1.55Ω@10V,3.5A 50W 4V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS. This product comes in a TO-220F-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 800V
- Continuous Drain Current (Id): 7A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.55Ω@10V,3.5A
- Power Dissipation (Pd): 50W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.9 grams.
More on SVF7N80F
Full Specifications of SVF7N80F
| Model Number | SVF7N80F |
| Model Name | Hangzhou Silan Microelectronics SVF7N80F |
| Category | MOSFETs |
| Brand | Hangzhou Silan Microelectronics |
| Description | 800V 7A 1.55Ω@10V,3.5A 50W 4V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.900 grams / 0.067021 oz |
| Package / Case | TO-220F-3 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | - |
| Drain Source Voltage (Vdss) | 800V |
| Continuous Drain Current (Id) | 7A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.55Ω@10V,3.5A |
| Power Dissipation (Pd) | 50W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
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