onsemi FDA20N50F is a FDA20N50F from onsemi, part of the MOSFETs. It is designed for 500V 22A 388W 260mΩ@10V,11A 5V@250uA 1PCSNChannel TO-3P MOSFETs ROHS. This product comes in a TO-3P package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 500V
- Continuous Drain Current (Id): 22A
- Power Dissipation (Pd): 388W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 260mΩ@10V,11A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 3.39nF@25V
- Total Gate Charge (Qg@Vgs): 65nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.095 grams.
More on FDA20N50F
Full Specifications of FDA20N50F
| Model Number | FDA20N50F |
| Model Name | onsemi FDA20N50F |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 500V 22A 388W 260mΩ@10V,11A 5V@250uA 1PCSNChannel TO-3P MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 7.095 grams / 0.250269 oz |
| Package / Case | TO-3P |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 500V |
| Continuous Drain Current (Id) | 22A |
| Power Dissipation (Pd) | 388W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 260mΩ@10V,11A |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 3.39nF@25V |
| Total Gate Charge (Qg@Vgs) | 65nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |