FDMC8878 by onsemi – Specifications

onsemi FDMC8878 is a FDMC8878 from onsemi, part of the MOSFETs. It is designed for 30V 9.6mΩ@10V,9.6A 3V@250uA 1PCSNChannel WDFN-8(3.3x3.3) MOSFETs ROHS. This product comes in a WDFN-8(3.3x3.3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 9.6A;16.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9.6mΩ@10V,9.6A
  • Power Dissipation (Pd): 2.1W;31W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 118pF@15V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.23nF@15V
  • Total Gate Charge (Qg@Vgs): 26nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FDMC8878

Model NumberFDMC8878
Model Nameonsemi FDMC8878
CategoryMOSFETs
Brandonsemi
Description30V 9.6mΩ@10V,9.6A 3V@250uA 1PCSNChannel WDFN-8(3.3x3.3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseWDFN-8(3.3x3.3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)9.6A;16.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)9.6mΩ@10V,9.6A
Power Dissipation (Pd)2.1W;31W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)118pF@15V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.23nF@15V
Total Gate Charge (Qg@Vgs)26nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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