onsemi FDB3632-F085 is a FDB3632-F085 from onsemi, part of the MOSFETs. It is designed for 100V 80A 0.75mΩ@10V,80A 310W 4V@250uA 1PCSNChannel TO-263AB MOSFETs ROHS. This product comes in a TO-263AB package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 80A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 0.75mΩ@10V,80A
- Power Dissipation (Pd): 310W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 200pF@25V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 6nF@25V
- Total Gate Charge (Qg@Vgs): 84nC@0~10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.27 grams.
More on FDB3632-F085
Full Specifications of FDB3632-F085
Model Number | FDB3632-F085 |
Model Name | onsemi FDB3632-F085 |
Category | MOSFETs |
Brand | onsemi |
Description | 100V 80A 0.75mΩ@10V,80A 310W 4V@250uA 1PCSNChannel TO-263AB MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 2.270 grams / 0.080072 oz |
Package / Case | TO-263AB |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | - |
Drain Source Voltage (Vdss) | 100V |
Continuous Drain Current (Id) | 80A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.75mΩ@10V,80A |
Power Dissipation (Pd) | 310W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | 200pF@25V |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 6nF@25V |
Total Gate Charge (Qg@Vgs) | 84nC@0~10V |
Operating Temperature | -55℃~+175℃@(Tj) |