FDB3632-F085 by onsemi – Specifications

onsemi FDB3632-F085 is a FDB3632-F085 from onsemi, part of the MOSFETs. It is designed for 100V 80A 0.75mΩ@10V,80A 310W 4V@250uA 1PCSNChannel TO-263AB MOSFETs ROHS. This product comes in a TO-263AB package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 80A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 0.75mΩ@10V,80A
  • Power Dissipation (Pd): 310W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 200pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 6nF@25V
  • Total Gate Charge (Qg@Vgs): 84nC@0~10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.27 grams.

Full Specifications of FDB3632-F085

Model NumberFDB3632-F085
Model Nameonsemi FDB3632-F085
CategoryMOSFETs
Brandonsemi
Description100V 80A 0.75mΩ@10V,80A 310W 4V@250uA 1PCSNChannel TO-263AB MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.270 grams / 0.080072 oz
Package / CaseTO-263AB
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)80A
Drain Source On Resistance (RDS(on)@Vgs,Id)0.75mΩ@10V,80A
Power Dissipation (Pd)310W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)200pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)6nF@25V
Total Gate Charge (Qg@Vgs)84nC@0~10V
Operating Temperature-55℃~+175℃@(Tj)

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