FDMC8882 by onsemi – Specifications

onsemi FDMC8882 is a FDMC8882 from onsemi, part of the MOSFETs. It is designed for 30V 14.3mΩ@10.5A,10V 2.5V@250uA 1PCSNChannel WDFN-8(3.3x3.3) MOSFETs ROHS. This product comes in a WDFN-8(3.3x3.3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 10.5A;16A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 14.3mΩ@10.5A,10V
  • Power Dissipation (Pd): 2.3W;18W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 945pF@15V
  • Total Gate Charge (Qg@Vgs): 20nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.101 grams.

Full Specifications of FDMC8882

Model NumberFDMC8882
Model Nameonsemi FDMC8882
CategoryMOSFETs
Brandonsemi
Description30V 14.3mΩ@10.5A,10V 2.5V@250uA 1PCSNChannel WDFN-8(3.3x3.3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.101 grams / 0.003563 oz
Package / CaseWDFN-8(3.3x3.3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)10.5A;16A
Drain Source On Resistance (RDS(on)@Vgs,Id)14.3mΩ@10.5A,10V
Power Dissipation (Pd)2.3W;18W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)945pF@15V
Total Gate Charge (Qg@Vgs)20nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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