FDD5690 by onsemi – Specifications

onsemi FDD5690 is a FDD5690 from onsemi, part of the MOSFETs. It is designed for 60V 30A 27mΩ@9A,10V 4V@250uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 30A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 27mΩ@9A,10V
  • Power Dissipation (Pd): 3.2W;50W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.11nF@25V
  • Total Gate Charge (Qg@Vgs): 32nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.45 grams.

Full Specifications of FDD5690

Model NumberFDD5690
Model Nameonsemi FDD5690
CategoryMOSFETs
Brandonsemi
Description60V 30A 27mΩ@9A,10V 4V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.450 grams / 0.015873 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)30A
Drain Source On Resistance (RDS(on)@Vgs,Id)27mΩ@9A,10V
Power Dissipation (Pd)3.2W;50W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.11nF@25V
Total Gate Charge (Qg@Vgs)32nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare onsemi - FDD5690 With Other 200 Models

Related Models - FDD5690 Alternative

Scroll to Top