onsemi FDFS2P102 is a FDFS2P102 from onsemi, part of the MOSFETs. It is designed for 20V 3.3A 900mW 125mΩ@3.3A,10V 2V@250uA 1PCSPChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 3.3A
- Power Dissipation (Pd): 900mW
- Drain Source On Resistance (RDS(on)@Vgs,Id): 125mΩ@3.3A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 270pF@10V
- Total Gate Charge (Qg@Vgs): 10nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.215 grams.
More on FDFS2P102
Full Specifications of FDFS2P102
| Model Number | FDFS2P102 |
| Model Name | onsemi FDFS2P102 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 20V 3.3A 900mW 125mΩ@3.3A,10V 2V@250uA 1PCSPChannel SOIC-8 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.215 grams / 0.007584 oz |
| Package / Case | SOIC-8 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 20V |
| Continuous Drain Current (Id) | 3.3A |
| Power Dissipation (Pd) | 900mW |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 125mΩ@3.3A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
| Type | 1PCSPChannel |
| Input Capacitance (Ciss@Vds) | 270pF@10V |
| Total Gate Charge (Qg@Vgs) | 10nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |