onsemi FDG311N is a FDG311N from onsemi, part of the MOSFETs. It is designed for 20V 1.9A 115mΩ@1.9A,4.5V 750mW 1.5V@250uA 1PCSNChannel SC-70-6 MOSFETs ROHS. This product comes in a SC-70-6 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 1.9A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 115mΩ@1.9A,4.5V
- Power Dissipation (Pd): 750mW
- Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 270pF@10V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.028 grams.
More on FDG311N
Full Specifications of FDG311N
| Model Number | FDG311N |
| Model Name | onsemi FDG311N |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 20V 1.9A 115mΩ@1.9A,4.5V 750mW 1.5V@250uA 1PCSNChannel SC-70-6 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.028 grams / 0.000988 oz |
| Package / Case | SC-70-6 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 20V |
| Continuous Drain Current (Id) | 1.9A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 115mΩ@1.9A,4.5V |
| Power Dissipation (Pd) | 750mW |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 270pF@10V |
| Total Gate Charge (Qg@Vgs) | [email protected] |
| Operating Temperature | -55℃~+150℃@(Tj) |