onsemi FDMS8670S is a FDMS8670S from onsemi, part of the MOSFETs. It is designed for 30V 3.5mΩ@20A,10V 3V@1mA N Channel PQFN-8(5x6) MOSFETs ROHS. This product comes in a PQFN-8(5x6) package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 20A;42A
- Power Dissipation (Pd): 2.5W;78W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 3.5mΩ@20A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 3V@1mA
- Type: N Channel
- Input Capacitance (Ciss@Vds): 4nF@15V
- Total Gate Charge (Qg@Vgs): 73nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on FDMS8670S
Full Specifications of FDMS8670S
| Model Number | FDMS8670S |
| Model Name | onsemi FDMS8670S |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 30V 3.5mΩ@20A,10V 3V@1mA N Channel PQFN-8(5x6) MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | PQFN-8(5x6) |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 20A;42A |
| Power Dissipation (Pd) | 2.5W;78W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.5mΩ@20A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@1mA |
| Type | N Channel |
| Input Capacitance (Ciss@Vds) | 4nF@15V |
| Total Gate Charge (Qg@Vgs) | 73nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |