onsemi FDS6609A is a FDS6609A from onsemi, part of the MOSFETs. It is designed for 30V 6.3A 32mΩ@10V,7A 2.5W 3V@250uA P Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as null. Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 6.3A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 32mΩ@10V,7A
- Power Dissipation (Pd): 2.5W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: P Channel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.207 grams.
More on FDS6609A
Full Specifications of FDS6609A
| Model Number | FDS6609A |
| Model Name | onsemi FDS6609A |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 30V 6.3A 32mΩ@10V,7A 2.5W 3V@250uA P Channel SOIC-8 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.207 grams / 0.007302 oz |
| Package / Case | SOIC-8 |
| Package / Arrange | |
| Battery | No |
| ECCN | - |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 6.3A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 32mΩ@10V,7A |
| Power Dissipation (Pd) | 2.5W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Type | P Channel |