onsemi FDT458P is a FDT458P from onsemi, part of the MOSFETs. It is designed for 30V 3.4A 130mΩ@10V,3.4A 3W 3V@250uA 1PCSPChannel SOT-223 MOSFETs ROHS. This product comes in a SOT-223 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 3.4A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 130mΩ@10V,3.4A
- Power Dissipation (Pd): 3W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 205pF@15V
- Total Gate Charge (Qg@Vgs): 3.5nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.202 grams.
More on FDT458P
Full Specifications of FDT458P
| Model Number | FDT458P |
| Model Name | onsemi FDT458P |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 30V 3.4A 130mΩ@10V,3.4A 3W 3V@250uA 1PCSPChannel SOT-223 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.202 grams / 0.007125 oz |
| Package / Case | SOT-223 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 3.4A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 130mΩ@10V,3.4A |
| Power Dissipation (Pd) | 3W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Type | 1PCSPChannel |
| Input Capacitance (Ciss@Vds) | 205pF@15V |
| Total Gate Charge (Qg@Vgs) | 3.5nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |