onsemi FDZ209N is a FDZ209N from onsemi, part of the MOSFETs. It is designed for 60V 4A 80mΩ@4A,5V 2W 3V@250uA 1PCSNChannel BGA-12(2x2.5) MOSFETs ROHS. This product comes in a BGA-12(2x2.5) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 4A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 80mΩ@4A,5V
- Power Dissipation (Pd): 2W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 657pF@30V
- Total Gate Charge (Qg@Vgs): 9nC@5V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on FDZ209N
Full Specifications of FDZ209N
| Model Number | FDZ209N |
| Model Name | onsemi FDZ209N |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 60V 4A 80mΩ@4A,5V 2W 3V@250uA 1PCSNChannel BGA-12(2x2.5) MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | BGA-12(2x2.5) |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 4A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 80mΩ@4A,5V |
| Power Dissipation (Pd) | 2W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 657pF@30V |
| Total Gate Charge (Qg@Vgs) | 9nC@5V |
| Operating Temperature | -55℃~+150℃@(Tj) |