NDB6030L by onsemi – Specifications

onsemi NDB6030L is a NDB6030L from onsemi, part of the MOSFETs. It is designed for 30V 52A 75W 13.5mΩ@26A,10V 3V@250uA 1PCSNChannel TO-263AB MOSFETs ROHS. This product comes in a TO-263AB package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 52A
  • Power Dissipation (Pd): 75W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 13.5mΩ@26A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.35nF@15V
  • Total Gate Charge (Qg@Vgs): 60nC@10V
  • Operating Temperature: -65℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of NDB6030L

Model NumberNDB6030L
Model Nameonsemi NDB6030L
CategoryMOSFETs
Brandonsemi
Description30V 52A 75W 13.5mΩ@26A,10V 3V@250uA 1PCSNChannel TO-263AB MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263AB
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)52A
Power Dissipation (Pd)75W
Drain Source On Resistance (RDS(on)@Vgs,Id)13.5mΩ@26A,10V
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.35nF@15V
Total Gate Charge (Qg@Vgs)60nC@10V
Operating Temperature-65℃~+175℃@(Tj)

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