onsemi NDS356AP is a NDS356AP from onsemi, part of the MOSFETs. It is designed for 30V 1.1A 500mW 200mΩ@10V,1.3A 2.5V@250uA 1PCSPChannel SOT-23-3 MOSFETs ROHS. This product comes in a SOT-23-3 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 1.1A
- Power Dissipation (Pd): 500mW
- Drain Source On Resistance (RDS(on)@Vgs,Id): 200mΩ@10V,1.3A
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 280pF@10V
- Total Gate Charge (Qg@Vgs): 4.4nC@5V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.02 grams.
More on NDS356AP
Full Specifications of NDS356AP
| Model Number | NDS356AP |
| Model Name | onsemi NDS356AP |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 30V 1.1A 500mW 200mΩ@10V,1.3A 2.5V@250uA 1PCSPChannel SOT-23-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.020 grams / 0.000705 oz |
| Package / Case | SOT-23-3 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 1.1A |
| Power Dissipation (Pd) | 500mW |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 200mΩ@10V,1.3A |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Type | 1PCSPChannel |
| Input Capacitance (Ciss@Vds) | 280pF@10V |
| Total Gate Charge (Qg@Vgs) | 4.4nC@5V |
| Operating Temperature | -55℃~+150℃@(Tj) |