onsemi NTHL067N65S3H is a NTHL067N65S3H from onsemi, part of the MOSFETs. It is designed for 650V 40A 266W 55mΩ@10V,20A [email protected] 1PCSNChannel TO-247-3 MOSFETs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 40A
- Power Dissipation (Pd): 266W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 55mΩ@10V,20A
- Gate Threshold Voltage (Vgs(th)@Id): [email protected]
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 3.75nF@400V
- Total Gate Charge (Qg@Vgs): 80nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.2 grams.
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Full Specifications of NTHL067N65S3H
| Model Number | NTHL067N65S3H |
| Model Name | onsemi NTHL067N65S3H |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 650V 40A 266W 55mΩ@10V,20A [email protected] 1PCSNChannel TO-247-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 7.200 grams / 0.253973 oz |
| Package / Case | TO-247-3 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 650V |
| Continuous Drain Current (Id) | 40A |
| Power Dissipation (Pd) | 266W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 55mΩ@10V,20A |
| Gate Threshold Voltage (Vgs(th)@Id) | [email protected] |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 3.75nF@400V |
| Total Gate Charge (Qg@Vgs) | 80nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |