FDS7766S by onsemi – Specifications

onsemi FDS7766S is a FDS7766S from onsemi, part of the MOSFETs. It is designed for 30V 17A 5.5mΩ@17A,10V 1W 3V@1mA 1PCSNChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 17A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.5mΩ@17A,10V
  • Power Dissipation (Pd): 1W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@1mA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.785nF@15V
  • Total Gate Charge (Qg@Vgs): 58nC@5V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.215 grams.

Full Specifications of FDS7766S

Model NumberFDS7766S
Model Nameonsemi FDS7766S
CategoryMOSFETs
Brandonsemi
Description30V 17A 5.5mΩ@17A,10V 1W 3V@1mA 1PCSNChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.215 grams / 0.007584 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)17A
Drain Source On Resistance (RDS(on)@Vgs,Id)5.5mΩ@17A,10V
Power Dissipation (Pd)1W
Gate Threshold Voltage (Vgs(th)@Id)3V@1mA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.785nF@15V
Total Gate Charge (Qg@Vgs)58nC@5V
Operating Temperature-55℃~+150℃@(Tj)

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