onsemi NVMTS1D5N08H is a NVMTS1D5N08H from onsemi, part of the MOSFETs. It is designed for 80V 1.4mΩ@90A,10V 4V@490uA 1PCSNChannel DFNW-8(8.3x8.4) MOSFETs ROHS. This product comes in a DFNW-8(8.3x8.4) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 80V
- Continuous Drain Current (Id): 38A;273A
- Power Dissipation (Pd): 5W;258W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4mΩ@90A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@490uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 8.22nF@40V
- Total Gate Charge (Qg@Vgs): 125nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on NVMTS1D5N08H
Full Specifications of NVMTS1D5N08H
Model Number | NVMTS1D5N08H |
Model Name | onsemi NVMTS1D5N08H |
Category | MOSFETs |
Brand | onsemi |
Description | 80V 1.4mΩ@90A,10V 4V@490uA 1PCSNChannel DFNW-8(8.3x8.4) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | DFNW-8(8.3x8.4) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 80V |
Continuous Drain Current (Id) | 38A;273A |
Power Dissipation (Pd) | 5W;258W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.4mΩ@90A,10V |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@490uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 8.22nF@40V |
Total Gate Charge (Qg@Vgs) | 125nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |