NVMTS1D5N08H by onsemi – Specifications

onsemi NVMTS1D5N08H is a NVMTS1D5N08H from onsemi, part of the MOSFETs. It is designed for 80V 1.4mΩ@90A,10V 4V@490uA 1PCSNChannel DFNW-8(8.3x8.4) MOSFETs ROHS. This product comes in a DFNW-8(8.3x8.4) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 38A;273A
  • Power Dissipation (Pd): 5W;258W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4mΩ@90A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@490uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 8.22nF@40V
  • Total Gate Charge (Qg@Vgs): 125nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of NVMTS1D5N08H

Model NumberNVMTS1D5N08H
Model Nameonsemi NVMTS1D5N08H
CategoryMOSFETs
Brandonsemi
Description80V 1.4mΩ@90A,10V 4V@490uA 1PCSNChannel DFNW-8(8.3x8.4) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseDFNW-8(8.3x8.4)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)38A;273A
Power Dissipation (Pd)5W;258W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.4mΩ@90A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@490uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)8.22nF@40V
Total Gate Charge (Qg@Vgs)125nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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