onsemi STD5407NT4G is a STD5407NT4G from onsemi, part of the MOSFETs. It is designed for 40V 26mΩ@20A,10V 3.5V@250uA 1PCSNChannel DPAK MOSFETs ROHS. This product comes in a DPAK package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 7.6A;38A
- Power Dissipation (Pd): 2.9W;75W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 26mΩ@20A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1nF@32V
- Total Gate Charge (Qg@Vgs): 20nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.466 grams.
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Full Specifications of STD5407NT4G
| Model Number | STD5407NT4G |
| Model Name | onsemi STD5407NT4G |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 40V 26mΩ@20A,10V 3.5V@250uA 1PCSNChannel DPAK MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.466 grams / 0.016438 oz |
| Package / Case | DPAK |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 40V |
| Continuous Drain Current (Id) | 7.6A;38A |
| Power Dissipation (Pd) | 2.9W;75W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 26mΩ@20A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.5V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1nF@32V |
| Total Gate Charge (Qg@Vgs) | 20nC@10V |
| Operating Temperature | -55℃~+175℃@(Tj) |