onsemi 2N7000BU is a 2N7000BU from onsemi, part of the MOSFETs. It is designed for 60V 200mA 5Ω@500mA,10V 400mW 3V@1mA 1PCSNChannel TO-92-3 MOSFETs ROHS. This product comes in a TO-92-3 package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 200mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5Ω@500mA,10V
- Power Dissipation (Pd): 400mW
- Gate Threshold Voltage (Vgs(th)@Id): 3V@1mA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 50pF@25V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.26 grams.
More on 2N7000BU
Full Specifications of 2N7000BU
| Model Number | 2N7000BU |
| Model Name | onsemi 2N7000BU |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 60V 200mA 5Ω@500mA,10V 400mW 3V@1mA 1PCSNChannel TO-92-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.260 grams / 0.009171 oz |
| Package / Case | TO-92-3 |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 200mA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 5Ω@500mA,10V |
| Power Dissipation (Pd) | 400mW |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@1mA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 50pF@25V |
| Operating Temperature | -55℃~+150℃@(Tj) |