FDB6670AS by onsemi – Specifications

onsemi FDB6670AS is a FDB6670AS from onsemi, part of the MOSFETs. It is designed for 30V 62A 8.5mΩ@31A,10V 62.5W 3V@1mA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS. This product comes in a D2PAK(TO-263) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 62A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8.5mΩ@31A,10V
  • Power Dissipation (Pd): 62.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@1mA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.57nF@15V
  • Total Gate Charge (Qg@Vgs): 39nC@15V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FDB6670AS

Model NumberFDB6670AS
Model Nameonsemi FDB6670AS
CategoryMOSFETs
Brandonsemi
Description30V 62A 8.5mΩ@31A,10V 62.5W 3V@1mA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK(TO-263)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)62A
Drain Source On Resistance (RDS(on)@Vgs,Id)8.5mΩ@31A,10V
Power Dissipation (Pd)62.5W
Gate Threshold Voltage (Vgs(th)@Id)3V@1mA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.57nF@15V
Total Gate Charge (Qg@Vgs)39nC@15V
Operating Temperature-55℃~+150℃@(Tj)

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