onsemi NVBG020N090SC1 is a NVBG020N090SC1 from onsemi, part of the MOSFETs. It is designed for 900V 16mΩ@18V,60A 4.3V@20mA 1PCSNChannel D2PAK-7 MOSFETs ROHS. This product comes in a D2PAK-7 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 900V
- Continuous Drain Current (Id): 9.8A;112A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 16mΩ@18V,60A
- Power Dissipation (Pd): 3.7W;477W
- Gate Threshold Voltage (Vgs(th)@Id): 4.3V@20mA
- Reverse Transfer Capacitance (Crss@Vds): 25pF@450V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 4.415nF@450V
- Total Gate Charge (Qg@Vgs): 200nC@15V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.18 grams.
More on NVBG020N090SC1
Full Specifications of NVBG020N090SC1
Model Number | NVBG020N090SC1 |
Model Name | onsemi NVBG020N090SC1 |
Category | MOSFETs |
Brand | onsemi |
Description | 900V 16mΩ@18V,60A 4.3V@20mA 1PCSNChannel D2PAK-7 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 2.180 grams / 0.076897 oz |
Package / Case | D2PAK-7 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 900V |
Continuous Drain Current (Id) | 9.8A;112A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 16mΩ@18V,60A |
Power Dissipation (Pd) | 3.7W;477W |
Gate Threshold Voltage (Vgs(th)@Id) | 4.3V@20mA |
Reverse Transfer Capacitance (Crss@Vds) | 25pF@450V |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 4.415nF@450V |
Total Gate Charge (Qg@Vgs) | 200nC@15V |
Operating Temperature | -55℃~+175℃@(Tj) |